The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
Very fast and robust intrinsic body diode
Low capacitance
Source sensing pin for increased efficiency
| 屬性 | 數值 |
|---|---|
| 通道類型 | N |
| 最大連續漏極電流 | 40 A |
| 最大漏源電壓 | 650 V |
| 封裝類型 | PowerFLAT 8x8 HV |
| 安裝類型 | 表面貼裝 |
| 引腳數目 | 4 |
| 最大漏源電阻值 | 0.067 O |
| 通道模式 | 增強 |
| 最大柵閾值電壓 | 5V |
| 每片芯片元件數目 | 1 |
| 晶體管材料 | SiC |
