This device is an N-channel Power MOSFET based on the MDmesh? M5 innovative vertical process technology combined with the well-known PowerMESH? horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Extremely low RDS(on)
Low gate charge and input capacitance
Excellent switching performance
Applications
Switching applications
| 屬性 | 數值 |
|---|---|
| 通道類型 | N |
| 最大連續漏極電流 | 7 A |
| 封裝類型 | D2PAK |
| 安裝類型 | 表面貼裝 |
| 引腳數目 | 3 |
| 最大漏源電阻值 | 630 mΩ |
| 通道模式 | 增強 |
| 最大柵閾值電壓 | 5V |
| 最小柵閾值電壓 | 3V |
| 最大功率耗散 | 70 W |
| 晶體管配置 | 單 |
| 最大柵源電壓 | ±25 V |
| 最高工作溫度 | +150 °C |
| 長度 | 10.4mm |
| 典型柵極電荷@Vgs | 15 nC @ 10 V |
| 每片芯片元件數目 | 1 |
| 寬度 | 9.35mm |
