SUPERFET III MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Features:
700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 58 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF)
Excellent body diode performance (low Qrr, robust body diode)
Optimized Capacitance
Typ. RDS(on) = 98 mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Higher system reliability in LLC and Phase shift full bridge circuit
Lower peak Vds and lower Vgs oscillation
Applications:
Telecommunication
Cloud system
Industrial
End Products:
Telecom power
Server power
EV charger
Solar / UPS
| 屬性 | 數值 |
|---|---|
| 通道類型 | N |
| 最大連續漏極電流 | 30 A |
| 最大漏源電壓 | 650 V |
| 封裝類型 | TO-247 |
| 安裝類型 | 通孔 |
| 引腳數目 | 3 |
| 最大漏源電阻值 | 110 mΩ |
| 通道模式 | 增強 |
| 最大柵閾值電壓 | 5V |
| 最小柵閾值電壓 | 3V |
| 最大功率耗散 | 240 W |
| 晶體管配置 | 單 |
| 最大柵源電壓 | ±30 V |
| 寬度 | 4.82mm |
| 每片芯片元件數目 | 1 |
| 最高工作溫度 | +150 °C |
| 典型柵極電荷@Vgs | 58 nC @ 10 V |
| 長度 | 15.87mm |
