This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size?" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
TYPICAL RDS(on) = 0.017 Ω
LOW THRESHOLD DRIVE
STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
APPLICATIONS
DC MOTOR DRIVE
DC-DC CONVERTERS
BATTERY MANAGEMENT INOMADIC EQUIPMENT
POWER MANAGEMENT IPORTABLE/DESKTOP Pcs
| 屬性 | 數值 |
|---|---|
| 通道類型 | N |
| 最大連續漏極電流 | 7.5 A |
| 最大漏源電壓 | 60 V |
| 封裝類型 | SO |
| 安裝類型 | 表面貼裝 |
| 引腳數目 | 8 |
| 最大漏源電阻值 | 21 mΩ |
| 通道模式 | 增強 |
| 最小柵閾值電壓 | 1V |
| 最大功率耗散 | 2.5 W |
| 晶體管配置 | 單 |
| 最大柵源電壓 | ±16 V |
| 每片芯片元件數目 | 1 |
| 典型柵極電荷@Vgs | 25 nC @ 4.5 V |
| 長度 | 5mm |
| 最高工作溫度 | +150 °C |
| 寬度 | 4mm |
