This high voltage N-channel Power MOSFET is part of the MDmesh? DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
| 屬性 | 數值 |
|---|---|
| 通道類型 | N |
| 最大連續漏極電流 | 10 A |
| 封裝類型 | DPAK |
| 安裝類型 | 表面貼裝 |
| 引腳數目 | 3 |
| 最大漏源電阻值 | 420 mΩ |
| 通道模式 | 增強 |
| 最大柵閾值電壓 | 5V |
| 最小柵閾值電壓 | 4V |
| 最大功率耗散 | 110 W |
| 晶體管配置 | 單 |
| 最大柵源電壓 | ±25 V |
| 長度 | 6.6mm |
| 典型柵極電荷@Vgs | 16.5 nC @ 10 V |
| 最高工作溫度 | +150 °C |
| 寬度 | 6.2mm |
| 每片芯片元件數目 | 1 |
