The device in manufactured in low voltage PNP planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Very low collector to emitter saturation voltage
3A continuous collector current
DC current gain, hFE >100
SOT-223 plastic package for surface mounting circuits in tape and reel packing
40 V breakdown voltage V(BR)CER
Applications
Power management in portable equipment
Voltage regulation in bias supply circuits
Switching regulator in battery charger applications
Heavy load driver
屬性 | 數值 |
---|---|
封裝類型 | SOT-223 |
安裝類型 | 表面貼裝 |
引腳數目 | 4 |
最大功率耗散 | 1.6 W |
晶體管配置 | 單 |
最高工作溫度 | +150 °C |
長度 | 6.7mm |
寬度 | 3.7mm |
每片芯片元件數目 | 1 |